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IPB80N08S207ATMA1
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IPB80N08S207ATMA1

Product Overview

Category

The IPB80N08S207ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB80N08S207ATMA1 is typically available in a TO-263 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 80A
  • On-Resistance (RDS(on)): 8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N08S207ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • Suitable for high-power applications
  • Efficient power management
  • Low power dissipation

Disadvantages

  • May require careful handling due to high voltage capabilities
  • Sensitivity to static electricity

Working Principles

The IPB80N08S207ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB80N08S207ATMA1 is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB80N08S207ATMA1 include: - IRF840 - FDP8870 - STP80NF03L

In conclusion, the IPB80N08S207ATMA1 is a high-performance power MOSFET suitable for a wide range of high-power switching applications, offering efficient power management and control capabilities.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IPB80N08S207ATMA1 dalam penyelesaian teknikal

  1. What is the maximum drain-source voltage of IPB80N08S207ATMA1?

    • The maximum drain-source voltage of IPB80N08S207ATMA1 is 80V.

  2. What is the continuous drain current rating of IPB80N08S207ATMA1?

    • The continuous drain current rating of IPB80N08S207ATMA1 is 80A.

  3. What is the on-resistance of IPB80N08S207ATMA1?

    • The on-resistance of IPB80N08S207ATMA1 is typically 8mΩ at Vgs = 10V.

  4. What is the gate threshold voltage of IPB80N08S207ATMA1?

    • The gate threshold voltage of IPB80N08S207ATMA1 is typically 2V.

  5. What is the power dissipation of IPB80N08S207ATMA1?

    • The power dissipation of IPB80N08S207ATMA1 is 300W.

  6. What are the typical applications for IPB80N08S207ATMA1?

    • IPB80N08S207ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.

  7. What is the operating temperature range of IPB80N08S207ATMA1?

    • The operating temperature range of IPB80N08S207ATMA1 is -55°C to 175°C.

  8. Is IPB80N08S207ATMA1 RoHS compliant?

    • Yes, IPB80N08S207ATMA1 is RoHS compliant.

  9. Does IPB80N08S207ATMA1 have built-in ESD protection?

    • Yes, IPB80N08S207ATMA1 has built-in ESD protection.

  10. What package type does IPB80N08S207ATMA1 come in?

    • IPB80N08S207ATMA1 comes in a TO-263-7 package.