IPB100N10S305ATMA1

Introduction

The IPB100N10S305ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance capabilities.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPB100N10S305ATMA1 is used as a switching device in power electronics applications, such as motor control, power supplies, and inverters.
• Characteristics: This MOSFET exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The IPB100N10S305ATMA1 is typically available in a TO-263 package, which provides efficient thermal dissipation.
• Essence: The essence of this MOSFET lies in its ability to handle high currents and voltages with minimal power loss.
• Packaging/Quantity: It is commonly supplied in reels or tubes containing a specific quantity per package.

Specifications

The IPB100N10S305ATMA1 features the following specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 100A - On-State Resistance (RDS(on)): 3.05mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 75nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of the IPB100N10S305ATMA1 is as follows: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)

Functional Features

• High current and voltage handling capability
• Low on-state resistance for reduced power dissipation
• Fast switching speed for improved efficiency
• Enhanced thermal performance in the TO-263 package

Advantages and Disadvantages

Advantages

• High current and voltage ratings
• Low on-state resistance
• Fast switching speed
• Efficient thermal management

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to static electricity and voltage spikes

Working Principles

The IPB100N10S305ATMA1 operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans

The IPB100N10S305ATMA1 finds extensive use in the following application fields: - Motor control systems - Power supply units - Inverters for renewable energy systems - Electric vehicle powertrains - Industrial automation equipment

Detailed and Complete Alternative Models

Some alternative models to the IPB100N10S305ATMA1 include: - IRFB7440PbF - FDPF33N25T - STP80NF55-06

In conclusion, the IPB100N10S305ATMA1 power MOSFET offers high-performance characteristics and is well-suited for demanding power electronics applications, despite its higher cost and sensitivity to voltage spikes.

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