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BSC882N03LSGATMA1
Product Overview
Category
BSC882N03LSGATMA1 belongs to the category of power MOSFETs.
Use
It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The BSC882N03LSGATMA1 comes in a TO-263-3 package.
Essence
The essence of this product lies in its ability to efficiently control and manage power in electronic circuits.
Packaging/Quantity
The BSC882N03LSGATMA1 is typically packaged in reels with a quantity of 1000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 80A
- On-Resistance (RDS(on)): 8.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 40nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The pin configuration of BSC882N03LSGATMA1 includes three pins: Drain, Source, and Gate.
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
- Low gate charge facilitates efficient gate control.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for precise power control
Disadvantages
- Sensitive to static electricity
- Requires careful handling during installation
Working Principles
The BSC882N03LSGATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This power MOSFET is commonly used in: - Power supplies - Motor control - DC-DC converters - Inverters
Detailed and Complete Alternative Models
Some alternative models to BSC882N03LSGATMA1 include: - IRF3205 - FDP8870 - STP80NF03L
In conclusion, the BSC882N03LSGATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.
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What is the maximum voltage rating of BSC882N03LSGATMA1?
- The maximum voltage rating of BSC882N03LSGATMA1 is typically 30V.
What is the continuous drain current of BSC882N03LSGATMA1?
- The continuous drain current of BSC882N03LSGATMA1 is typically 100A.
What is the on-resistance (RDS(on)) of BSC882N03LSGATMA1?
- The on-resistance (RDS(on)) of BSC882N03LSGATMA1 is typically 8.5mΩ.
What is the gate threshold voltage of BSC882N03LSGATMA1?
- The gate threshold voltage of BSC882N03LSGATMA1 is typically 2V.
Is BSC882N03LSGATMA1 suitable for high-power applications?
- Yes, BSC882N03LSGATMA1 is suitable for high-power applications due to its high current and voltage ratings.
What are the typical applications for BSC882N03LSGATMA1?
- Typical applications for BSC882N03LSGATMA1 include power supplies, motor control, and automotive systems.
Does BSC882N03LSGATMA1 require a heat sink for thermal management?
- Depending on the specific application and power dissipation, a heat sink may be required for optimal thermal management of BSC882N03LSGATMA1.
What is the operating temperature range of BSC882N03LSGATMA1?
- The operating temperature range of BSC882N03LSGATMA1 is typically -55°C to 175°C.
Can BSC882N03LSGATMA1 be used in parallel to increase current handling capability?
- Yes, BSC882N03LSGATMA1 can be used in parallel to increase current handling capability in certain applications.
Are there any recommended layout or PCB design considerations for using BSC882N03LSGATMA1?
- It is recommended to follow the manufacturer's guidelines for layout and PCB design to optimize performance and reliability when using BSC882N03LSGATMA1 in technical solutions.