S34ML04G104BHI010

Product Overview

Category

S34ML04G104BHI010 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34ML04G104BHI010 has a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It offers high-speed read and write operations, allowing for efficient data processing.
• Reliable performance: The product ensures data integrity and durability through advanced error correction techniques.
• Low power consumption: S34ML04G104BHI010 is designed to minimize power consumption, making it suitable for battery-powered devices.
• Long lifespan: With its robust design and wear-leveling algorithms, this NAND flash memory provides a long lifespan.

Package and Quantity

S34ML04G104BHI010 is available in a compact package, typically a small outline integrated circuit (SOIC) or ball grid array (BGA). The quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of S34ML04G104BHI010 is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. WE: Write enable
5. RE: Read enable
6. CLE: Command latch enable
7. A0-A18: Address inputs
8. DQ0-DQ15: Data input/output
9. R/B: Ready/busy status
10. WP: Write protect

Functional Features

• Block Erase and Program: S34ML04G104BHI010 allows for erasing and programming data in blocks, enabling efficient management of stored information.
• Random Access: The product supports random access to individual memory cells, facilitating quick retrieval of data.
• Error Correction: Advanced error correction techniques ensure data integrity by detecting and correcting errors during read and write operations.
• Wear-Leveling: S34ML04G104BHI010 incorporates wear-leveling algorithms to evenly distribute program/erase cycles across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Reliable performance
• Long lifespan

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance compared to some alternative models

Working Principles

S34ML04G104BHI010 utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a floating-gate transistor. When writing data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves measuring the electrical charge in each memory cell to determine the stored value.

Detailed Application Field Plans

S34ML04G104BHI010 finds applications in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. S34ML08G104BHI010: A similar NAND flash memory with double the storage capacity (8 GB).
2. S34ML02G104BHI010: A lower-capacity alternative with 2 GB of storage.
3. S34ML16G104BHI010: A higher-capacity option with 16 GB of storage.

These alternative models offer different storage capacities to cater to various application requirements.

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