S29PL064J60BFI120L

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write operations
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Sold individually, typically in reels or trays

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Density: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Voltage Supply: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns (max)
• Page Size: 256 bytes
• Erase/Program Suspend/Resume: Yes
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The S29PL064J60BFI120L has a total of 48 pins arranged as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RESET#
48. GND

Functional Features

• Fast Read and Write Operations: The S29PL064J60BFI120L offers high-speed data access, enabling quick read and write operations.
• Erase/Program Suspend/Resume: This feature allows for efficient management of memory operations by suspending and resuming erase or program cycles.
• Reliability: With a long data retention period and robust design, this flash memory ensures reliable storage of critical information.
• Low Power Consumption: The device operates with low power requirements, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast read and write operations - Low power consumption - Erase/program suspend/resume capability - Long data retention period

Disadvantages: - Limited to parallel interface - Relatively small page size compared to newer flash memory technologies

Working Principles

The S29PL064J60BFI120L utilizes NOR flash memory technology. It stores data in a non-volatile manner, meaning the data remains intact even when the power is turned off. The memory cells are organized in a grid-like structure, allowing for efficient storage and retrieval of data. The device uses a parallel interface to communicate with the host system, enabling fast data transfer.

Detailed Application Field Plans

The S29PL064J60BFI120L is commonly used in various electronic devices that require reliable and high-density data storage. Some of the typical application fields include:

1. Embedded Systems: Used as a storage medium for firmware, boot code, and configuration data in microcontrollers and system-on-chips.
2. Automotive Electronics: Employed for storing critical data such as engine control parameters, vehicle diagnostics, and multimedia content in automotive systems.
3. Industrial Control Systems: Utilized for storing program code, configuration settings, and historical data in industrial automation and control applications.
4. Consumer Electronics: Integrated into devices like digital cameras, set-top boxes, and gaming consoles to provide non-volatile storage for user data and firmware.

Detailed and Complete Alternative Models

1. S29GL064N90TFI040: Similar flash memory from Cypress Semiconductor with a different package and interface type (TSOP and parallel).
2. MT29F64G08CBABA: Flash memory from Micron Technology offering higher density (64 Gigabits) and a different interface (NAND and serial).
3. **AT45DB641E-S