S29GL128S90TFA020

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory solution for high-performance applications
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 128 gigabits (16 gigabytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel NOR Flash
• Access Time: 90 nanoseconds
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Modes: Continuous burst, linear burst, wrap burst
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors
• Endurance: Minimum 100,000 program/erase cycles

Detailed Pin Configuration

The S29GL128S90TFA020 has a total of 56 pins. The pin configuration is as follows:

1. VCCQ - Power supply for I/O buffers
2. DQ0-DQ15 - Data input/output pins
3. A0-A21 - Address input pins
4. CE# - Chip Enable
5. OE# - Output Enable
6. WE# - Write Enable
7. RP# - Reset/Power-down
8. RY/BY# - Ready/Busy
9. BYTE# - Byte Enable
10. WP#/ACC - Write Protect/Acceleration
11. VSS - Ground

Functional Features

• High-speed data transfer with fast access times
• Reliable and durable non-volatile memory solution
• Low power consumption
• Built-in erase and program suspend/resume functions
• Sector architecture allows for efficient data management
• Compatible with various microcontrollers and processors

Advantages

• Large storage capacity suitable for high-performance applications
• Fast read/write speeds enhance overall system performance
• Wide operating temperature range enables usage in extreme environments
• High endurance ensures long-term reliability
• Versatile interface compatibility simplifies integration into existing systems

Disadvantages

• Higher cost compared to lower capacity flash memory options
• Limited availability of alternative models with similar specifications
• Requires careful handling to prevent damage during installation or removal

Working Principles

The S29GL128S90TFA020 is based on NOR flash memory technology. It stores data using a grid of memory cells, where each cell represents a bit of information. The memory cells can be electrically programmed (to store data) or erased (to delete data). The device utilizes an address bus to select specific memory locations for reading or writing data.

Detailed Application Field Plans

The S29GL128S90TFA020 is commonly used in various electronic devices that require high-capacity and fast-access data storage. Some application fields include: 1. Solid-state drives (SSDs) 2. Network routers and switches 3. Automotive infotainment systems 4. Industrial control systems 5. Medical equipment

Detailed and Complete Alternative Models

While the S29GL128S90TFA020 is a highly capable flash memory device, there are alternative models available with similar specifications. Some notable alternatives include: 1. S29GL064S90TFI010 - 64 gigabit parallel NOR flash memory 2. S29GL256S90TFI010 - 256 gigabit parallel NOR flash memory 3. S29GL512S90TFI010 - 512 gigabit parallel NOR flash memory

These alternative models offer varying capacities to suit different application requirements.

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