Cypress Semiconductor Corp
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S29GL128P11TAI010
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S29GL128P11TAI010

Product Overview

Category

S29GL128P11TAI010 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
  • High-speed data transfer: Provides fast read and write speeds for efficient data access.
  • Reliable: Built with advanced error correction techniques to ensure data integrity.
  • Low power consumption: Optimized for energy efficiency, extending battery life in portable devices.

Package

The S29GL128P11TAI010 flash memory device comes in a compact package that is compatible with industry-standard surface mount technology (SMT). It is designed to be easily integrated into electronic circuit boards.

Essence

The essence of S29GL128P11TAI010 lies in its ability to store and retrieve large amounts of data reliably and efficiently. It serves as a crucial component in modern electronic devices, enabling them to store and access user data effectively.

Packaging/Quantity

The S29GL128P11TAI010 flash memory device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 128 gigabits (16 gigabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 50 megabytes per second (read), up to 30 megabytes per second (write)
  • Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The S29GL128P11TAI010 flash memory device has a total of 56 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. WE#
  31. RE#
  32. WP#
  33. RY/BY#
  34. CE#
  35. BYTE#
  36. DQ0
  37. DQ1
  38. DQ2
  39. DQ3
  40. DQ4
  41. DQ5
  42. DQ6
  43. DQ7
  44. DQ8
  45. DQ9
  46. DQ10
  47. DQ11
  48. DQ12
  49. DQ13
  50. DQ14
  51. DQ15
  52. VSS
  53. VSS
  54. NC
  55. NC
  56. VCC

Functional Features

  • Block Erase: Allows for erasing large blocks of data, enabling efficient memory management.
  • Page Program: Supports fast programming of individual memory pages, facilitating quick data storage.
  • Read Operation: Enables high-speed data retrieval for efficient access to stored information.
  • Write Protection: Provides write protection functionality to prevent accidental modification or deletion of data.
  • Error Correction: Implements advanced error correction techniques to ensure data integrity and reliability.

Advantages

  • High storage capacity allows for ample data storage in electronic devices.
  • Fast read and write speeds enhance overall system performance.
  • Low power consumption prolongs battery life in portable devices.
  • Reliable data retention ensures the integrity of stored information.
  • Compact package enables easy integration into electronic circuit boards.

Disadvantages

  • Limited compatibility with certain older devices that do not support parallel interface flash memory.
  • Higher cost compared to lower-capacity flash memory options.

Working Principles

The S29GL128P11TAI010 flash memory device utilizes NAND flash technology. It stores data by trapping electric charges within a grid of memory cells. These charges represent binary data, which can be read or modified as needed. The device employs various control signals and voltage levels to perform operations such as reading, writing, erasing, and protecting data.

Detailed Application Field Plans

The S29GL128P11TAI010 flash memory

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi S29GL128P11TAI010 dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of S29GL128P11TAI010 in technical solutions:

  1. Q: What is the S29GL128P11TAI010? A: The S29GL128P11TAI010 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits (16 megabytes) and operates at a voltage range of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL128P11TAI010? A: The S29GL128P11TAI010 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL128P11TAI010? A: The S29GL128P11TAI010 uses a parallel NOR Flash interface with an 8-bit or 16-bit data bus, making it compatible with a wide range of microcontrollers and processors.

  4. Q: What is the maximum operating frequency of S29GL128P11TAI010? A: The S29GL128P11TAI010 can operate at frequencies up to 66 MHz, allowing for fast read and write operations.

  5. Q: Does S29GL128P11TAI010 support random access read and write operations? A: Yes, the S29GL128P11TAI010 supports random access read and write operations, enabling efficient data storage and retrieval.

  6. Q: What is the erase time of S29GL128P11TAI010? A: The S29GL128P11TAI010 typically requires around 2 milliseconds for sector erase and 30 milliseconds for chip erase, ensuring quick data erasure when needed.

  7. Q: Can S29GL128P11TAI010 withstand high temperatures? A: Yes, the S29GL128P11TAI010 is designed to operate reliably in a wide temperature range, typically from -40°C to 85°C, making it suitable for harsh environments.

  8. Q: Does S29GL128P11TAI010 support hardware and software write protection? A: Yes, the S29GL128P11TAI010 provides both hardware and software write protection mechanisms to prevent accidental or unauthorized modification of data.

  9. Q: What is the typical power consumption of S29GL128P11TAI010? A: The S29GL128P11TAI010 has low power consumption, with active read currents typically around 20 mA and standby currents as low as 10 µA.

  10. Q: Is S29GL128P11TAI010 RoHS compliant? A: Yes, the S29GL128P11TAI010 is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental standards.

Please note that the answers provided here are general and may vary depending on specific implementation details and datasheet specifications.