S29GL064S80FHIV10

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated circuit (IC) package
• Essence: Non-volatile memory solution for electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Memory Capacity: 64 gigabits (8 gigabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Read/Write Speed: Up to 80 megabytes per second
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The S29GL064S80FHIV10 flash memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A21: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed data transfer with fast read and write operations
• Reliable and durable non-volatile memory solution
• Low power consumption
• Easy integration into various electronic devices
• Support for multiple operating voltages
• Built-in write protection mechanism

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer speeds
• Long data retention period
• Wide operating temperature range
• Versatile application in various electronic devices

Disadvantages

• Relatively high cost compared to other memory options
• Limited endurance (100,000 program/erase cycles)

Working Principles

The S29GL064S80FHIV10 flash memory utilizes a floating-gate transistor technology. It stores data by trapping electric charges within the floating gate of each memory cell. These charges represent binary information (0 or 1). The stored data remains intact even when power is removed from the device, making it non-volatile.

During read operations, the memory controller sends an address to select a specific memory location. The data stored at that location is then retrieved and sent back to the controller for further processing. Write operations involve sending data along with the corresponding address to be stored in the memory cells.

Detailed Application Field Plans

The S29GL064S80FHIV10 flash memory chip finds applications in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Gaming consoles
6. Automotive electronics
7. Industrial control systems
8. Medical devices

Detailed and Complete Alternative Models

1. S29GL032N90TFI040: 32 gigabit parallel flash memory with 90 nanosecond access time.
2. S29GL128P90TFCR20: 128 gigabit parallel flash memory with 90 nanosecond access time and BGA package.
3. S29GL256P10FFIR20: 256 gigabit parallel flash memory with 10 nanosecond access time and BGA package.
4. S29GL512P11FFIR20: 512 gigabit parallel flash memory with 11 nanosecond access time and BGA package.
5. S29GL01GP11FFIR20: 1 terabit parallel flash memory with 11 nanosecond access time and BGA package.

(Note: The above alternative models are for reference purposes and may not be an exhaustive list.)

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