S29GL064N90TFVR20

Product Overview

Category

S29GL064N90TFVR20 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 64 gigabits (8 gigabytes) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Reliable performance: Designed to withstand frequent read/write cycles.
• Low power consumption: Optimized for energy efficiency.
• Wide operating temperature range: Can function in extreme environmental conditions.

Package

S29GL064N90TFVR20 is available in a compact and standardized package, commonly known as a TSOP (Thin Small Outline Package). This package ensures easy integration into various electronic devices.

Essence

The essence of S29GL064N90TFVR20 lies in its ability to provide high-capacity, non-volatile storage with fast access times, making it an essential component for modern electronic devices.

Packaging/Quantity

This product is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Manufacturer: Cypress Semiconductor
• Model: S29GL064N90TFVR20
• Memory Type: NOR Flash
• Capacity: 64 gigabits (8 gigabytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of S29GL064N90TFVR20 is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/Byte# control
8. RY/BY#: Ready/Busy# status output
9. WP#/ACC: Write protect/Acceleration control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase and program operations
• Block erase and program operations
• Chip erase operation
• Hardware data protection
• Software data protection
• Automatic sleep mode
• Error correction code (ECC) support
• Status register for various control and status information

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access times
• Reliable performance
• Low power consumption
• Wide operating temperature range

Disadvantages

• Higher cost compared to lower-capacity flash memory options
• Limited endurance (number of read/write cycles)

Working Principles

S29GL064N90TFVR20 utilizes the principles of NOR flash memory technology. It stores data in a grid-like structure of memory cells, where each cell represents a bit of information. The data can be written or erased by applying specific electrical signals to the memory cells. During read operations, the stored data is retrieved by sensing the electrical state of the memory cells.

Detailed Application Field Plans

S29GL064N90TFVR20 finds applications in various electronic devices that require high-capacity, non-volatile storage. Some of the key application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Portable media players
4. Automotive infotainment systems
5. Industrial control systems
6. Medical devices
7. Gaming consoles

Detailed and Complete Alternative Models

1. S29GL128N10TFI010: 128 gigabit (16 gigabyte) capacity, parallel interface, TSOP package.
2. S34ML08G200BHI000: 64 gigabit (8 gigabyte) capacity, parallel interface, BGA package.
3. MT29F64G08CBAAAWP-IT:E: 64 gigabit (8 gigabyte) capacity, parallel interface, TSOP package.

These alternative models offer similar storage capacities and functionalities, providing options for different design requirements.

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