S29GL064N90FFIS12

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for reliable data storage
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Model: S29GL064N90FFIS12
• Memory Type: NOR Flash
• Capacity: 64 Megabits (8 Megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Interface: Parallel
• Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Pin Configuration (Detailed)

The S29GL064N90FFIS12 has a total of 48 pins arranged as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Reset/Byte Mode Select)
8. RY/BY# (Ready/Busy)
9. WP#/ACC (Write Protect/Acceleration)
10. VSS (Ground)

(Note: Detailed pin configuration may vary depending on the package type.)

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Built-in error correction codes (ECC) for data integrity
• Low power consumption during standby mode
• Hardware and software protection mechanisms for data security

Advantages

• Large storage capacity for storing extensive data
• Fast access times for quick data retrieval
• Reliable and durable non-volatile memory technology
• Suitable for a wide range of electronic devices and applications
• Efficient sector erase capability for flexible memory management

Disadvantages

• Higher cost compared to other types of memory
• Limited endurance in terms of program/erase cycles
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

The S29GL064N90FFIS12 utilizes NOR flash memory technology, which is a type of non-volatile memory. It stores data by trapping electric charges within floating gate transistors. The presence or absence of charges determines the binary state of each memory cell.

During read operations, the memory controller sends an address to select a specific memory location. The stored data is then retrieved and sent back to the controller for further processing.

During write operations, the controller provides the address and data to be written. The memory cell at the specified address is erased (if necessary) and programmed with the new data.

Application Field Plans

The S29GL064N90FFIS12 is widely used in various electronic devices and applications, including:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics
5. Networking equipment
6. Medical devices

Its high capacity, fast access times, and reliability make it suitable for storing firmware, operating systems, configuration data, and other critical information in these fields.

Alternative Models

1. S29GL032N90FFIS12 - 32 Megabit (4 Megabyte) capacity
2. S29GL128N90FFIS12 - 128 Megabit (16 Megabyte) capacity
3. S29GL256N90FFIS12 - 256 Megabit (32 Megabyte) capacity
4. S29GL512N90FFIS12 - 512 Megabit (64 Megabyte) capacity

(Note: The above models are just a few examples; there are several alternative models available with varying capacities and specifications.)

This concludes the encyclopedia entry for the S29GL064N90FFIS12 flash memory.