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S29GL064N11FFIS33
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S29GL064N11FFIS33

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High-speed read and write operations
    • Large storage capacity
    • Low power consumption
  • Package: Integrated Circuit (IC)
  • Essence: Stores digital information in a compact and durable format
  • Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

  • Manufacturer: Cypress Semiconductor
  • Part Number: S29GL064N11FFIS33
  • Memory Type: NOR Flash
  • Capacity: 64 Megabits (8 Megabytes)
  • Organization: 8-bit parallel interface
  • Voltage Range: 2.7V to 3.6V
  • Access Time: 110 ns (typical)
  • Operating Temperature Range: -40°C to +85°C
  • RoHS Compliance: Yes

Detailed Pin Configuration

The S29GL064N11FFIS33 has a total of 48 pins, which are assigned various functions for communication and control purposes. The detailed pin configuration is as follows:

  1. VCC: Power supply voltage
  2. A0-A18: Address inputs
  3. DQ0-DQ7: Data inputs/outputs
  4. WE#: Write Enable
  5. CE#: Chip Enable
  6. OE#: Output Enable
  7. RP#/BYTE#: Reset/Byte#
  8. RY/BY#: Ready/Busy#
  9. WP#/ACC: Write Protect/Acceleration
  10. VSS: Ground

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

  • High-speed read and write operations
  • Sector erase and chip erase capabilities
  • Built-in program and erase algorithms
  • Automatic program and erase suspend/resume
  • Hardware data protection features (WP#/ACC pin)
  • Ready/Busy# status indication

Advantages and Disadvantages

Advantages: - Fast access times for efficient data retrieval - Large storage capacity suitable for various applications - Low power consumption for extended battery life - Reliable and durable non-volatile memory technology

Disadvantages: - Limited endurance (number of program/erase cycles) - Relatively higher cost compared to other memory technologies - Requires additional circuitry for interfacing with microcontrollers or processors

Working Principles

The S29GL064N11FFIS33 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is detected, allowing the retrieval of the stored information.

Detailed Application Field Plans

The S29GL064N11FFIS33 is commonly used in various electronic devices that require non-volatile data storage, such as:

  1. Embedded systems
  2. Consumer electronics
  3. Automotive applications
  4. Industrial control systems
  5. Networking equipment

Detailed and Complete Alternative Models

  1. S29GL032N11FFIS20: 32 Megabit (4 Megabyte) capacity, similar specifications
  2. S29GL128N10TFI010: 128 Megabit (16 Megabyte) capacity, similar specifications
  3. S29GL256N11FAI020: 256 Megabit (32 Megabyte) capacity, similar specifications

(Note: This is not an exhaustive list. There are several alternative models available from different manufacturers.)

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi S29GL064N11FFIS33 dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of S29GL064N11FFIS33 in technical solutions:

  1. Q: What is the S29GL064N11FFIS33? A: The S29GL064N11FFIS33 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 64 megabits (8 megabytes) and operates at a voltage of 3.3V.

  2. Q: What are the typical applications of S29GL064N11FFIS33? A: The S29GL064N11FFIS33 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, networking equipment, and consumer electronics.

  3. Q: What is the interface of S29GL064N11FFIS33? A: The S29GL064N11FFIS33 uses a parallel NOR Flash interface with an 8-bit data bus and various control signals for read, write, and erase operations.

  4. Q: What is the maximum operating frequency of S29GL064N11FFIS33? A: The S29GL064N11FFIS33 can operate at frequencies up to 66 MHz, allowing for fast data transfer rates.

  5. Q: What is the erase block size of S29GL064N11FFIS33? A: The S29GL064N11FFIS33 has a uniform sector architecture with an erase block size of 64 kilobytes.

  6. Q: Can S29GL064N11FFIS33 be used for code storage? A: Yes, the S29GL064N11FFIS33 is suitable for storing program code due to its fast access times and high reliability.

  7. Q: Does S29GL064N11FFIS33 support in-system programming? A: Yes, the S29GL064N11FFIS33 supports in-system programming, allowing for firmware updates without removing the memory device from the system.

  8. Q: What is the typical endurance of S29GL064N11FFIS33? A: The S29GL064N11FFIS33 has a typical endurance of 100,000 program/erase cycles, ensuring long-term reliability.

  9. Q: Does S29GL064N11FFIS33 have built-in error correction capabilities? A: No, the S29GL064N11FFIS33 does not have built-in error correction capabilities. It is recommended to use external error correction techniques if required.

  10. Q: Can S29GL064N11FFIS33 operate in harsh environments? A: Yes, the S29GL064N11FFIS33 is designed to operate in a wide temperature range and can withstand high levels of shock and vibration, making it suitable for rugged applications.

Please note that these answers are general and may vary depending on specific requirements and implementation details.