Cypress Semiconductor Corp
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S29GL032N90DFBR23

S29GL032N90DFBR23

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: Non-volatile, high-density, fast read/write speeds
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and efficient data storage solution
  • Packaging/Quantity: Available in reels of 250 units

Specifications

  • Manufacturer: Cypress Semiconductor
  • Memory Type: NOR Flash
  • Density: 32 Megabits (4 Megabytes)
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 90 ns
  • Organization: 4M x 8 bits
  • Erase/Program Suspend/Erase Suspend: Yes
  • Burst Mode: Yes
  • Sector Architecture: Uniform 64 KByte sectors with 16 KWord blocks
  • Programming Time: 10 µs per byte/word
  • Erase Time: 1.5 ms per sector
  • Data Retention: 20 years

Pin Configuration

The S29GL032N90DFBR23 has a total of 48 pins. The pin configuration is as follows:

  1. VCCQ
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. BYTE#
  27. WE#
  28. CE#
  29. RE#
  30. WP#
  31. RP#
  32. DQ0
  33. DQ1
  34. DQ2
  35. DQ3
  36. DQ4
  37. DQ5
  38. DQ6
  39. DQ7
  40. VSSQ
  41. VCC
  42. VSS
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed read and write operations
  • Low power consumption
  • Sector erase and program operations
  • Erase and program suspend/resume capability
  • Burst mode for faster data transfer
  • Reliable data retention and endurance

Advantages

  • High-density storage capacity
  • Fast access times
  • Wide operating voltage range
  • Low power consumption
  • Suspend/resume capability for efficient programming
  • Long data retention period

Disadvantages

  • Limited maximum density compared to other flash memory types
  • Higher cost per bit compared to some alternatives
  • Limited endurance compared to some other non-volatile memory technologies

Working Principles

The S29GL032N90DFBR23 is based on NOR Flash memory technology. It utilizes a grid of memory cells, where each cell stores one bit of information. The memory cells are organized into sectors and blocks, allowing for efficient erasing and programming operations. When data is written or read from the memory, electrical charges are applied to the memory cells, altering their state to represent the desired data.

Application Field Plans

The S29GL032N90DFBR23 is widely used in various electronic devices that require reliable and high-density data storage. Some common application fields include:

  1. Embedded systems
  2. Automotive electronics
  3. Industrial control systems
  4. Consumer electronics
  5. Networking equipment

Alternative Models

  • S29GL064N90TFI030: 64 Megabit NOR Flash Memory, 90 ns access time, TSOP package
  • S29GL128N10FFI010: 128 Megabit NOR Flash Memory, 10 ns access time, FBGA package
  • S29GL256P11FFIV20: 256 Megabit NOR Flash Memory, 11 ns access time, FBGA package
  • S29GL512P11FFIV20: 512 Megabit NOR Flash Memory, 11 ns access time, FBGA package

These alternative models offer different densities, access times, and package options to suit various application requirements.

Word count: 446 words

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi S29GL032N90DFBR23 dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of S29GL032N90DFBR23 in technical solutions:

  1. Q: What is the S29GL032N90DFBR23? A: The S29GL032N90DFBR23 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 32 megabits (4 megabytes) and operates at a voltage of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL032N90DFBR23? A: The S29GL032N90DFBR23 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL032N90DFBR23? A: The S29GL032N90DFBR23 uses a parallel NOR Flash interface with a 16-bit data bus.

  4. Q: What is the maximum operating frequency of S29GL032N90DFBR23? A: The S29GL032N90DFBR23 can operate at a maximum frequency of 90 MHz.

  5. Q: Does S29GL032N90DFBR23 support random access read operations? A: Yes, the S29GL032N90DFBR23 supports random access read operations, allowing fast access to specific memory locations.

  6. Q: Can S29GL032N90DFBR23 be used for code storage in microcontrollers? A: Yes, the S29GL032N90DFBR23 is commonly used for storing program code in microcontrollers due to its high capacity and fast access times.

  7. Q: Does S29GL032N90DFBR23 support in-system programming (ISP)? A: Yes, the S29GL032N90DFBR23 supports in-system programming, allowing firmware updates without removing the memory device from the system.

  8. Q: What is the typical endurance of S29GL032N90DFBR23? A: The S29GL032N90DFBR23 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting operation.

  9. Q: Does S29GL032N90DFBR23 have built-in error correction capabilities? A: No, the S29GL032N90DFBR23 does not have built-in error correction capabilities. External error correction techniques may be required for data integrity.

  10. Q: Is S29GL032N90DFBR23 compatible with other flash memory devices? A: Yes, the S29GL032N90DFBR23 is compatible with other flash memory devices that use a similar parallel NOR Flash interface, allowing easy integration into existing systems.

Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.