S29AS016J70BFI043

Product Overview

Category

S29AS016J70BFI043 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High-speed read and write operations
• Non-volatile memory (retains data even when power is turned off)
• Large storage capacity
• Compact size
• Low power consumption

Package

S29AS016J70BFI043 is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, providing a crucial component for the functioning of electronic devices.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the requirements of the customer or manufacturer.

Specifications

• Memory Capacity: 16 megabits (2 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of S29AS016J70BFI043 is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. HOLD - Suspends ongoing data transfer
4. WP - Write protect
5. SCK - Serial clock input
6. SI - Serial data input
7. SO - Serial data output
8. CS - Chip select

Functional Features

• High-speed data transfer with SPI interface
• Sector erase and byte program operations
• Hardware and software write protection
• Low power consumption in standby mode
• Automatic sleep and wake-up functions

Advantages and Disadvantages

Advantages

• Fast read and write operations enhance overall device performance
• Non-volatile memory ensures data integrity even during power loss
• Compact size allows for easy integration into various electronic devices
• Low power consumption prolongs battery life

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to traditional storage solutions

Working Principles

S29AS016J70BFI043 utilizes flash memory technology, which is based on the principle of storing data in floating gate transistors. The memory cells are organized into sectors, which can be individually erased or programmed. Data is written by applying a high voltage to the control gate of the transistor, trapping electrons in the floating gate. To read data, the charge level of the floating gate is measured, determining the stored information.

Detailed Application Field Plans

S29AS016J70BFI043 finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. S25FL128SAGMFI001 - 128 megabit (16 megabyte) flash memory with SPI interface
2. MT29F256G08CJAAA - 256 gigabit (32 gigabyte) NAND flash memory with parallel interface
3. AT24C02BN-SH-T - 2 kilobit (256 byte) EEPROM memory with I2C interface

These alternative models offer different capacities, interfaces, and features, providing options to suit specific requirements.

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