S25FL128P0XNFI003

Product Overview

Category

The S25FL128P0XNFI003 belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The S25FL128P0XNFI003 retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 128 megabits (16 megabytes).
• Fast access times: The device provides quick read and write operations, enabling efficient data transfer.
• Reliable: It has built-in error correction mechanisms to ensure data integrity.
• Low power consumption: The S25FL128P0XNFI003 is designed to minimize energy usage, making it suitable for battery-powered devices.

Package

The S25FL128P0XNFI003 is available in a compact surface-mount package, which facilitates easy integration into circuit boards.

Essence

This flash memory device allows for reliable and high-capacity data storage in a compact form factor, making it an essential component in modern electronic devices.

Packaging/Quantity

The S25FL128P0XNFI003 is typically packaged in reels or trays, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory capacity: 128 megabits (16 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data retention: Up to 20 years
• Erase/program cycles: Up to 100,000 cycles

Detailed Pin Configuration

The S25FL128P0XNFI003 has a standard pin configuration, as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect input
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select input

Functional Features

• High-speed data transfer: The S25FL128P0XNFI003 supports fast read and write operations, enabling efficient data handling.
• Error correction: Built-in error correction mechanisms ensure data integrity during storage and retrieval.
• Sector erase capability: It allows for erasing specific sectors of the memory, facilitating efficient data management.
• Security features: The device includes hardware protection mechanisms to prevent unauthorized access to stored data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Low power consumption
• Reliable data retention
• Compact form factor

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other memory technologies

Working Principles

The S25FL128P0XNFI003 utilizes flash memory technology, which stores data in electrically isolated cells within the device. These cells can be electrically programmed and erased using specific voltage levels. When reading data, the device retrieves the stored information by detecting the electrical state of each cell.

Detailed Application Field Plans

The S25FL128P0XNFI003 is widely used in various applications, including: - Computer systems - Mobile devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

• S25FL064L: 64 megabit (8 megabyte) flash memory device with similar characteristics and package options.
• S25FL256S: 256 megabit (32 megabyte) flash memory device with higher storage capacity.

These alternative models offer different storage capacities to cater to specific application requirements.

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