IS29GL256S-10DHV01-TR

Product Overview

Category

IS29GL256S-10DHV01-TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL256S-10DHV01-TR offers a storage capacity of 256 megabits (32 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory chip ensures quick read and write operations.
• Low power consumption: The IS29GL256S-10DHV01-TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Durable and reliable: This chip is built to withstand harsh environmental conditions and offers high reliability in terms of data retention.

Package and Quantity

The IS29GL256S-10DHV01-TR is available in a surface mount package. It is typically sold in reels or trays containing a specific quantity of chips, depending on the manufacturer's specifications.

Specifications

• Manufacturer: Integrated Silicon Solution Inc. (ISSI)
• Part Number: IS29GL256S-10DHV01-TR
• Memory Type: Flash
• Memory Size: 256 Megabits (32 Megabytes)
• Access Time: 10 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The IS29GL256S-10DHV01-TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. DQ0
36. DQ1
37. DQ2
38. DQ3
39. DQ4
40. DQ5
41. DQ6
42. DQ7
43. VSS
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Block Erase: The IS29GL256S-10DHV01-TR supports block erase operations, allowing for efficient erasure of large data blocks.
• Page Program: This flash memory chip enables page program operations, enabling data to be written in smaller increments.
• Sector Protection: Certain sectors of the memory can be protected from accidental erasure or modification.
• Read and Write Operations: The IS29GL256S-10DHV01-TR provides fast and reliable read and write operations, ensuring efficient data access.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick read and write operations.
• Low power consumption makes it suitable for battery-powered devices.
• Durable and reliable, with high data retention.

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces.
• Relatively higher cost compared to lower capacity flash memory chips.

Working Principles

The IS29GL256S-10DHV01-TR utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be electrically erased and reprogrammed when needed.

Detailed Application Field Plans

The IS29GL256S-10DHV01-TR is widely used in various electronic devices that require non-volatile storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Used for storing photos and videos captured by the camera.
3. Portable media players: Used for storing music, videos, and other multimedia files.
4. Industrial control systems: Used