IS29GL256S-10DHB01-TR

Product Overview

Category

IS29GL256S-10DHB01-TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• High storage capacity: The IS29GL256S-10DHB01-TR offers a storage capacity of 256 gigabits (32 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed of 10 nanoseconds, this flash memory device ensures quick and efficient data transfer.
• Reliable performance: The IS29GL256S-10DHB01-TR is known for its high reliability and durability, making it suitable for long-term use.
• Low power consumption: This flash memory device consumes minimal power, contributing to energy efficiency in electronic devices.
• Compact package: The IS29GL256S-10DHB01-TR comes in a small form factor, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL256S-10DHB01-TR is typically packaged in trays or reels. Each tray/reel contains a specific quantity of flash memory devices, usually ranging from hundreds to thousands, depending on the customer's requirements.

Specifications

• Model: IS29GL256S-10DHB01-TR
• Storage Capacity: 256 gigabits (32 gigabytes)
• Speed: 10 nanoseconds
• Voltage: 3.3V
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL256S-10DHB01-TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. RE#
32. BYTE#
33. DQ0
34. DQ1
35. DQ2
36. DQ3
37. DQ4
38. DQ5
39. DQ6
40. DQ7
41. DQ8
42. DQ9
43. DQ10
44. DQ11
45. DQ12
46. DQ13
47. DQ14
48. DQ15

Functional Features

• Erase and Program Operations: The IS29GL256S-10DHB01-TR supports both erase and program operations, allowing users to modify the stored data as needed.
• Block Architecture: This flash memory device is organized into multiple blocks, enabling efficient management of data storage and retrieval.
• Error Correction Code (ECC): The IS29GL256S-10DHB01-TR incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Write Protection: Certain blocks or sectors of the flash memory can be write-protected, preventing accidental modification or deletion of critical data.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance and durability contribute to long-term usage.
• Low power consumption enhances energy efficiency.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces.
• Relatively higher cost compared to lower-capacity flash memory options.

Working Principles

The IS29GL256S-10DHB01-TR utilizes a combination of floating-gate transistors and semiconductor technology to store and retrieve data. It employs a parallel interface to communicate with the host device, enabling efficient data transfer.

When data is written to the flash memory, the device applies electrical charges to specific memory cells, altering their state and storing the desired information. During read operations, the stored data is retrieved by sensing the electrical state of each memory cell.

Detailed Application Field Plans

The IS29GL256S-10DHB01-TR finds applications in various electronic devices, including but not limited to: - Computers and laptops for primary or secondary storage. -