CY7C1515KV18-250BZXI
Product Overview
Category
The CY7C1515KV18-250BZXI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.
Use
This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.
Characteristics
- High Performance: The CY7C1515KV18-250BZXI offers fast access times and high bandwidth, making it suitable for demanding applications.
- Large Capacity: With a capacity of 2 megabits (256 kilobytes), this SRAM chip provides ample storage space for data-intensive tasks.
- Low Power Consumption: Despite its high performance, the CY7C1515KV18-250BZXI is designed to operate efficiently with low power consumption.
- Wide Temperature Range: This chip can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.
Package
The CY7C1515KV18-250BZXI is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures easy integration into circuit boards and provides robust protection for the chip.
Essence
The essence of the CY7C1515KV18-250BZXI lies in its ability to provide fast and reliable data storage and retrieval, enabling efficient operation of various electronic devices.
Packaging/Quantity
This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for production purposes.
Specifications
- Organization: 256K x 8 bits
- Voltage Supply: 1.8V
- Access Time: 10 ns
- Operating Temperature Range: -40°C to +85°C
- Interface: Parallel
- Package Type: BGA
Detailed Pin Configuration
The CY7C1515KV18-250BZXI has a total of 48 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- GND
- VDD
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- CE#
- WE#
- OE#
- UB#
- LB#
- BYTE#
- ADSP#
- ADSC#
- ADSP#
- ADSC#
- ADSP#
- ADSC#
- ADSP#
- ADSC#
- ADSP#
- ADSC#
- ADSP#
- ADSC#
Functional Features
- Fast Access Time: The CY7C1515KV18-250BZXI offers a low access time of 10 ns, allowing for quick data retrieval and processing.
- High Bandwidth: With its wide data bus (8 bits), this SRAM chip can transfer large amounts of data simultaneously, enabling efficient data handling.
- Easy Integration: The parallel interface and industry-standard package make it easy to integrate the CY7C1515KV18-250BZXI into existing circuit designs.
- Low Power Consumption: This chip is designed to operate efficiently with low power consumption, reducing energy requirements and heat generation.
Advantages and Disadvantages
Advantages
- High-performance data storage and retrieval
- Large capacity for data-intensive applications
- Wide temperature range for versatile usage
- Compact and robust package for easy integration
Disadvantages
- Limited compatibility with certain interface protocols
- Relatively higher cost compared to lower-end SRAM options
Working Principles
The CY7C1515KV18-250BZXI operates based on the principles of static random access memory. It stores data in a volatile manner using flip-flops, allowing for fast read and write operations. The chip utilizes an address bus to select specific memory locations and a data bus to transfer information between the chip and the connected device.
Detailed Application Field Plans
The CY7C1515KV18-250BZXI finds application in various fields, including: 1. Computer Systems: Used as cache memory or main memory in high-performance
Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi CY7C1515KV18-250BZXI dalam penyelesaian teknikal
Sure! Here are 10 common questions and answers related to the application of CY7C1515KV18-250BZXI in technical solutions:
Q: What is the CY7C1515KV18-250BZXI? A: The CY7C1515KV18-250BZXI is a high-performance synchronous SRAM (Static Random Access Memory) device manufactured by Cypress Semiconductor.
Q: What is the capacity of the CY7C1515KV18-250BZXI? A: The CY7C1515KV18-250BZXI has a capacity of 18 Megabits (Mb), which is equivalent to 2.25 Megabytes (MB).
Q: What is the operating voltage range for this device? A: The CY7C1515KV18-250BZXI operates within a voltage range of 1.7V to 1.9V.
Q: What is the maximum clock frequency supported by this SRAM? A: The CY7C1515KV18-250BZXI supports a maximum clock frequency of 250 MHz.
Q: Can I use this SRAM in industrial applications? A: Yes, the CY7C1515KV18-250BZXI is suitable for industrial applications due to its wide operating temperature range (-40°C to +85°C) and robust design.
Q: Does this SRAM support burst mode operation? A: Yes, the CY7C1515KV18-250BZXI supports burst mode operation with various burst lengths.
Q: What is the latency of this SRAM? A: The CY7C1515KV18-250BZXI has a latency of 2 clock cycles for read operations and 3 clock cycles for write operations.
Q: Can I use this SRAM in low-power applications? A: Yes, the CY7C1515KV18-250BZXI features a deep power-down mode and various power-saving features to minimize power consumption.
Q: What interface does this SRAM use? A: The CY7C1515KV18-250BZXI uses a standard synchronous interface with separate input and output data ports.
Q: Are there any application notes or reference designs available for this SRAM? A: Yes, Cypress Semiconductor provides application notes, datasheets, and reference designs that can help you integrate the CY7C1515KV18-250BZXI into your technical solutions.
Please note that these answers are general and may vary depending on specific requirements and use cases. It's always recommended to refer to the official documentation provided by the manufacturer for accurate and detailed information.