Cypress Semiconductor Corp
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CY7C1263KV18-400BZI
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CY7C1263KV18-400BZI

Product Overview

Category

The CY7C1263KV18-400BZI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly utilized in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

  • High Performance: The CY7C1263KV18-400BZI offers fast access times and high bandwidth, making it suitable for demanding applications.
  • Large Capacity: With a capacity of 1,024 megabits (128 megabytes), this chip provides ample storage space for data-intensive tasks.
  • Low Power Consumption: Despite its high performance, the CY7C1263KV18-400BZI is designed to operate efficiently, minimizing power consumption.
  • Robust Packaging: The chip is housed in a durable package that protects it from external factors such as moisture, dust, and physical damage.
  • Essence: The essence of this product lies in its ability to provide reliable and high-speed data storage, contributing to the overall performance of electronic systems.

Packaging/Quantity

The CY7C1263KV18-400BZI is typically packaged in a surface-mount BGA (Ball Grid Array) package. Each package contains a single chip.

Specifications

  • Organization: 1,024 megabits (128 megabytes)
  • Operating Voltage: 1.8V
  • Access Time: 4 ns
  • Interface: Synchronous
  • Package Type: BGA
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The CY7C1263KV18-400BZI has a total of 165 pins. Here is a brief overview of the pin configuration:

  • VDD: Power supply voltage
  • VSS: Ground
  • DQ[0:15]: Data input/output pins
  • A[0:12]: Address input pins
  • CLK: Clock input
  • CS: Chip select input
  • WE: Write enable input
  • OE: Output enable input
  • DM[0:3]: Data mask input pins
  • DQS: Data strobe input/output

For a complete and detailed pin configuration diagram, please refer to the product datasheet.

Functional Features

  • Synchronous Operation: The CY7C1263KV18-400BZI synchronizes data transfers with an external clock signal, ensuring reliable and accurate communication.
  • Burst Mode: This chip supports burst mode operations, allowing for efficient consecutive data transfers.
  • Low Latency: With its fast access time, the CY7C1263KV18-400BZI minimizes delays in data retrieval, enhancing overall system performance.
  • Easy Integration: The chip is designed to be easily integrated into existing electronic systems, thanks to its standard interface and compatibility with various microprocessors.

Advantages and Disadvantages

Advantages

  • High-performance data storage solution
  • Large capacity for data-intensive applications
  • Low power consumption
  • Robust packaging for protection
  • Easy integration into existing systems

Disadvantages

  • Relatively high cost compared to other memory options
  • Limited compatibility with certain older systems or interfaces

Working Principles

The CY7C1263KV18-400BZI operates based on the principles of synchronous SRAM. It stores data in a static state using flip-flops, which allows for fast access times. The chip communicates with the external system through a synchronous interface, ensuring synchronized data transfers.

Detailed Application Field Plans

The CY7C1263KV18-400BZI finds applications in various fields, including:

  1. Computing Systems: Used as main memory in computers and servers to store program instructions and data.
  2. Networking Equipment: Utilized for packet buffering and caching in routers, switches, and network appliances.
  3. Telecommunications Systems: Employed in base stations, switches, and other telecom infrastructure for high-speed data storage.

Detailed and Complete Alternative Models

  • CY7C1263KV18-400BZC: Similar to the CY7C1263KV18-400BZI, but with a different package type (TSOP).
  • CY7C1263KV18-400BZXC: Offers extended temperature range (-40°C to +105°C) for more demanding environments.
  • CY7C1263KV18-400BZXC-10: Provides faster access time (3.5 ns) for applications requiring even higher performance.

These alternative models offer similar functionality but may differ in package type, temperature range, or access time.

In conclusion, the CY7C1263KV18-400BZI is a high-performance synchronous SRAM chip that provides fast and

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi CY7C1263KV18-400BZI dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of CY7C1263KV18-400BZI in technical solutions:

  1. Q: What is the CY7C1263KV18-400BZI? A: The CY7C1263KV18-400BZI is a high-performance synchronous SRAM (Static Random Access Memory) with a capacity of 18 megabits.

  2. Q: What are the key features of CY7C1263KV18-400BZI? A: Some key features include a fast access time of 4 ns, low power consumption, wide operating voltage range, and a compact BGA package.

  3. Q: What are the typical applications of CY7C1263KV18-400BZI? A: This SRAM can be used in various applications such as networking equipment, telecommunications systems, industrial automation, and high-speed data processing.

  4. Q: What is the operating voltage range for CY7C1263KV18-400BZI? A: The operating voltage range is typically between 1.7V and 1.9V.

  5. Q: Can CY7C1263KV18-400BZI operate at higher voltages? A: Yes, it can operate at higher voltages up to 2.0V, but it may affect the performance and reliability.

  6. Q: Does CY7C1263KV18-400BZI support multiple read and write operations simultaneously? A: Yes, this SRAM supports simultaneous read and write operations, allowing for efficient data transfer.

  7. Q: What is the maximum operating frequency of CY7C1263KV18-400BZI? A: The maximum operating frequency is 400 MHz, making it suitable for high-speed data processing applications.

  8. Q: Does CY7C1263KV18-400BZI have any built-in error correction capabilities? A: No, this SRAM does not have built-in error correction capabilities. Additional error correction mechanisms may be required in critical applications.

  9. Q: Can CY7C1263KV18-400BZI operate in harsh environments? A: Yes, this SRAM is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand moderate levels of shock and vibration.

  10. Q: Are there any specific design considerations when using CY7C1263KV18-400BZI? A: It is important to ensure proper power supply decoupling, signal integrity, and thermal management to optimize the performance and reliability of this SRAM in your design.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the CY7C1263KV18-400BZI in a technical solution.